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졸업논문(포스터) Fabrication of GaN on Si hierarchical nanowire

Relationship between density of GaN on Si hierarchical NWs and annealing time. Optimized annealing time to 1200 seconds ..

리포트| 2019.11.30| 1페이지| 2,000원| 조회(175)

졸업논문, sem, Photolithography, MOCVD, GaN, annealing, vls, hierarchical, mace, ATPES

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전체자료 16개

판매자 표지 $전자회절, Electron diffraction, 일반물리실험, 북스힐$

전자회절, Electron diffraction, 일반물리실험, 북스힐

이 실험은 Graphite의 격자 간격을 측정하는 것과 동시에 빛 뿐 아니라 모든 물질이 파동의 성질을 가지고 있다는 것을 확인할 수 있는 실험입니다. 이 물질파이론은 1923년 드브로이가 논문을 발표하며 세상에 알려졌습니다. 그리고 당시에는 물리량이 양자화 되어 있다는 것과 빛이나 전자와 같은 입자들이 파동과 입자의 성질을 모두 가진다는 것이 물리학계에서 널리 알려져 있었습니다. 물리학자들 중에는양자화 된 물리량을 가지는 입자들을 파동으로 다루면 어떨까 하고 생각하는 사람들이 나타나기 시작했습니다. 그리고 이후 양자역학으로 넘어가게 됩니다.

공학/기술| 2019.11.27| 4페이지| 1,000원| 조회(148)

전자회절, 일반물리실험, 북스힐, 양자화, graphite, Electron Di..

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학술보고서_ Growth of Si nanowires on a Si(111) by molecular beam epitaxy

분자선 에피턱셜법을 이용하여 실리콘 나노 선을 결정방향 (111)인 실리콘 기판 위에 성장하였다. 성장은 분자선 에피턱셜(molecular beam epitaxy) 장치를 이용하였으며, 주사전자현미경을 이용 하여 나노 선의 특징 및 길이와 지름을 측정하였다. 성장 온도와 장비를 통해 나노 선의 성장률이 화학기상증착법과 크게 다른 것을 확인하였다.

공학/기술| 2019.11.30| 4페이지| 2,000원| 조회(134)

MBE, thin film, 나노선, vls, si nanowire, 에피턱셜, S..

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졸업논문 - SNO2 Thin film

When the deposition time is increased, a secondary growth occurs in the thin films; the overlapping crossed stripes mentioned above or a wrinkled morphology would then take place on the inner side of the thin films.

공학/기술| 2019.11.30| 11페이지| 1,000원| 조회(117)

grain, 졸업논문, sem, TEM, thin film, SnO2, oxygen..

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학회발표 - Optic properties, Hall, photoluminescence

THE RELATION BETWEEN ELCTRIC AND OPTIC PROPERTIES OLEDEngineerABSTRACT The Hall measurement resistivity affects the pl sharp peaks (I1 and I2) assigned to the band to acceptor peak and the donor acceptor pair peak. It were related to the concentration impurities or defects. PL measurement was found D1 peak is due to the concentrations of oxygen vacancies and the D2 peak is related to structural defects.Experimental detail Si substrate temperature 400℃ and 500℃ deposition time 10min,20min,30min,and 60min. Surface morphology measured Scanning Electron Microscope Electric resistance measured by hall method Photoluminescence measurement at 4 K temperatureXRD ANALYSISSEM IMAGEEDAX ANALYSISHALL CARRIER DENSITY AND MOBILITY AND RESISRANCEPhotoluminescence measurementRESISTANCE AND PHOTOLUMINESCENCECONCLUSIONS ◈ Photoluminescence peak intensity behavior of a SnO2 thin film as a function of Hall resistivity ◈ The broad D1 peak is due to the concentrations of oxygen vacancies and the D2 peak is related to structural defects. ◈ The sharp peaks (I1 and I2) assigned to the band to acceptor peak and the donor acceptor pair peak, respectively, were related to the concentration impurities or defects affects resistivity.{nameOfApplication=Show}

공학/기술| 2019.11.30| 10페이지| 1,000원| 조회(113)

PHOTOLUMINESCENCE, xrd, sem, Hall, EDAX, 학회발표, Optic properties

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졸업논문(포스터) Fabrication of GaN on Si hierarchical nanowire

Relationship between density of GaN on Si hierarchical NWs and annealing time. Optimized annealing time to 1200 seconds and 850 ℃ temperature. Fabrication of GaN on Si hierarchical nanowire Presenter: OLEDEngineer Advisor: Summary ◈ Vertical Si nanowires of uniform length and diameter were successfully fabricated on Si (100) substrate by metal assisted chemical etching. ◈ ATPES increases density of Au NPs when no ATPES then low density of Au NPs were observed. ◈ The GaN on Si hierarchical NWs were synthesized by Au catalyzed vapor liquid solid growth. ◈ Hierarchical nanowires have shown much lower reflection in comparison with conventional nanowires. Introduction Results and Discussion Experiments Growth of GaN on Si hierarchical nanowires(NWs) for optoelectronic devices applications. Growth of GaN on Si hierarchical NWs for high power and high frequency devices. High surface to volume ratio in hierarchical NWs structure is id- eal in photovoltaics. Parameter Optimized Value Au - thickness 40nm Temperature Room temp Etching Time 5.5 minutes Etchant volume ratio 2:1:1 (HF:H2O2:EtOH) GaN - VLS Growth The GaN hierarchical NWs investigated in this study were synthesized by Au catalyzed VLS growth mechanism on p - Si (100) substrates in metalorganic chemical vapor deposition (MOCVD) reactor. Photoresist Si substrate Au GaN 1. Si NWs Optimization MACEtching Time Relationship between length of Si nanowires and the etching time at room temperature. Length of nanowires depends on etching time and doping con-centration. An nearly linear behavior can be obtained. Graph of the Si NWs length as a function of the etching time. 2. GaN on Si Hierarchical NWs Optimization Effect of annealing time Reflection 2μm 300sec Effect of APTES coating APTES enables GaN NWs grown more density and growth rate decrease than without APTES coating. After APTES Zhipeng Huang et al , Adv. Mater. 2011, 23, 289. Aligned GaN on Si hierarchical NWs exhibit excellent antire - flection properties over a broad range of wavelength. Low reflectivity implies higher absorption. Metal assisted chemical etching (MACE) Motivation Develop simple method to make GaN hierarchical NWs by MOCVD. Study optical property on GaN hierarchical NWs. Aim of work Growth Scheme MACE process MACE Parameter 1200sec 2μm 2μm Before APTES 10min 20min 40min 30min MACE VLS growth 300nm 2μm{nameOfApplication=Show}

공학/기술| 2019.11.30| 1페이지| 2,000원| 조회(175)

졸업논문, sem, Photolithography, MOCVD, GaN, anne..

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