혼성물리화학기상 증착법에 의한 알루미나 완충층을 가진 실리콘 기판 위의 MgB₂ 박막제조에 대한 연구 (Deposition of MgB₂ Thin Films on Alumina-Buffered Si Substrates by using Hybrid Physical-Chemical Vapor Deposition Method)

서지정보

· 발행기관 : 한국초전도학회
· 수록지 정보 : Progress in Superconductivity / 9권 / 2호 / 177 ~ 182페이지
· 저자명 : 이태경, 안기석, 강원남, 성원경, 허지영, 정순길, 이병국

초록

MgB₂ thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures 500 ~ 600˚C and under the reactor pressures of 25 ~ 50 Torr. There are some interfacial reactions in the as-grown films with impurities of mostly Mg₂Si, MgAl₂O₄, and other phases. The Tc s of MgB₂ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly Mg2 scussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

영어초록

MgB₂ thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures 500 ~ 600˚C and under the reactor pressures of 25 ~ 50 Torr. There are some interfacial reactions in the as-grown films with impurities of mostly Mg₂Si, MgAl₂O₄, and other phases. The Tc s of MgB₂ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly Mg2 scussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

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