MOCVD 법에 의한 Bi-Te계 열전소재 제조 및 박막형 열전소자 제작 (Growth of Bi-Te Based Materials by MOCVD and Fabrication of Thermoelectric Thin Film Devices)

서지정보

· 발행기관 : 한국전기전자재료학회
· 수록지 정보 : 전기전자재료학회논문지 / 21권 / 12호 / 1135 ~ 1140페이지
· 저자명 : 권성도, 주병권, 윤석진, 김진상

초록

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type Bi0.₄Sb1.6Te₃ and n-type Bi₂Te₃ thin films. Firstly, the p-type thermoelectric element was patterned after growth of 4 μm thickness of Bi0.₄Sb1.6Te₃ layer. Again n-type Bi₂Te₃ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for Bi₂Te₃. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of 1.3 ㎼ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

영어초록

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type Bi0.₄Sb1.6Te₃ and n-type Bi₂Te₃ thin films. Firstly, the p-type thermoelectric element was patterned after growth of 4 μm thickness of Bi0.₄Sb1.6Te₃ layer. Again n-type Bi₂Te₃ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for Bi₂Te₃. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of 1.3 ㎼ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

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