대향타겟식 스퍼터링 장치의 공정 조건에 따른 SiOx 가스 차단막의 특성 (Characteristics of SiOx Gas Barrier Films as a Function of Process Conditions in Facing Target Sputtering (FTS) System)

서지정보

· 발행기관 : 한국전기전자재료학회
· 수록지 정보 : 전기전자재료학회논문지 / 22권 / 7호 / 595 ~ 601페이지
· 저자명 : 배강, 손선영, 김화민, 홍재석, 왕태현

초록

For the silicon oxide (SiOx) films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration(O2/Ar+O2) introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the SiOx films are as follows: dTS and dTT are 90 mm and 120 mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3 %. Under this optimum conditions, it was found that the SiOx film was grown with a very high deposition rate of 250 Å/min by rf-power of 4.4 W/㎠, which was significantly enhanced as compared with a deposition rate (∼55 Å/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

영어초록

For the silicon oxide (SiOx) films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration(O2/Ar+O2) introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the SiOx films are as follows: dTS and dTT are 90 mm and 120 mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3 %. Under this optimum conditions, it was found that the SiOx film was grown with a very high deposition rate of 250 Å/min by rf-power of 4.4 W/㎠, which was significantly enhanced as compared with a deposition rate (∼55 Å/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

참고자료

· 없음